PORTLAND, Ore. — Electronics devices using ferroelectric transistors would turn on instantly without the need to boot from flash or hard-disk memories. Such ferroelectric transistors would likely use ...
Silicon’s elasticity has been under threat for some time and a joint paper in Science from UC Berkeley, Stanford, the Lawrence Berkeley National University and the University of Texas could spell the ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
Advanced Micro Devices has created new high-performance transistors in its labs based on the simple concept that sometimes two are better than one. The chipmaker said Tuesday it has manufactured in ...
This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...
Confined molecules inside carbon nanotubes polarize under gate voltage, creating transistors with three stable logic states from a single material system.
DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results